Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition | |
Tang, Shujie; Wang, Haomin; Zhang Y(张嵛); Li, Ang; Xie, Hong; Liu, Xiaoyu; Liu LQ(刘连庆)![]() | |
Department | 机器人学研究室 |
Source Publication | SCIENTIFIC REPORTS
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ISSN | 2045-2322 |
2013 | |
Volume | 3Pages:1-7 |
Indexed By | SCI |
WOS ID | WOS:000324382400001 |
Contribution Rank | 2 |
Funding Organization | National Science and Technology Major Projects of china [2011ZX02707] ; Chinese Academy of Sciences [KGZD-EW-303] ; CAS International Collaboration and Innovation Program on High Mobility Materials Engineering ; National Natural Science Foundation of China [11104303, 11274333, 11204339, 61136005] ; Science and Technology Commission of Shanghai Municipality [12JC1410100, 12JC1403900] |
Keyword | Scanning-tunneling-microscopy Single-crystal Graphene Zigzag Edges Electronic-properties Suspended Graphene Layer Graphene H-bn Transport Heterostructures Spectroscopy |
Abstract | To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moire patterns are observed and the sensitivity of moire interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.056. The occurrence of moire pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm(2).V-1.s(-1) at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure. |
Language | 英语 |
WOS Headings | Science & Technology |
WOS Subject | Multidisciplinary Sciences |
WOS Keyword | Scanning-tunneling-microscopy ; Single-crystal Graphene ; Zigzag Edges ; Electronic-properties ; Suspended Graphene ; Layer Graphene ; H-bn ; Transport ; Heterostructures ; Spectroscopy |
WOS Research Area | Science & Technology - Other Topics |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.sia.cn/handle/173321/12561 |
Collection | 机器人学研究室 |
Corresponding Author | Wang, Haomin |
Affiliation | 1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R.China 2.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Street, Shenhe District, Shenyang 110016, P. R. China 3.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, P. R. China 4.CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China |
Recommended Citation GB/T 7714 | Tang, Shujie,Wang, Haomin,Zhang Y,et al. Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition[J]. SCIENTIFIC REPORTS,2013,3:1-7. |
APA | Tang, Shujie.,Wang, Haomin.,Zhang Y.,Li, Ang.,Xie, Hong.,...&Jiang, Mianheng.(2013).Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition.SCIENTIFIC REPORTS,3,1-7. |
MLA | Tang, Shujie,et al."Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition".SCIENTIFIC REPORTS 3(2013):1-7. |
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