SIA OpenIR  > 机器人学研究室
Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition
Tang, Shujie; Wang, Haomin; Zhang Y(张嵛); Li, Ang; Xie, Hong; Liu, Xiaoyu; Liu LQ(刘连庆); Li, Tianxin; Huang, Fuqiang; Xie, Xiaoming; Jiang, Mianheng
作者部门机器人学研究室
关键词Scanning-tunneling-microscopy Single-crystal Graphene Zigzag Edges Electronic-properties Suspended Graphene Layer Graphene H-bn Transport Heterostructures Spectroscopy
发表期刊SCIENTIFIC REPORTS
ISSN2045-2322
2013
卷号3页码:1-7
收录类别SCI
WOS记录号WOS:000324382400001
产权排序2
资助机构National Science and Technology Major Projects of china [2011ZX02707] ; Chinese Academy of Sciences [KGZD-EW-303] ; CAS International Collaboration and Innovation Program on High Mobility Materials Engineering ; National Natural Science Foundation of China [11104303, 11274333, 11204339, 61136005] ; Science and Technology Commission of Shanghai Municipality [12JC1410100, 12JC1403900]
摘要

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moire patterns are observed and the sensitivity of moire interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.056. The occurrence of moire pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm(2).V-1.s(-1) at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

语种英语
WOS标题词Science & Technology
WOS类目Multidisciplinary Sciences
关键词[WOS]Scanning-tunneling-microscopy ; Single-crystal Graphene ; Zigzag Edges ; Electronic-properties ; Suspended Graphene ; Layer Graphene ; H-bn ; Transport ; Heterostructures ; Spectroscopy
WOS研究方向Science & Technology - Other Topics
引用统计
被引频次:107[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sia.cn/handle/173321/12561
专题机器人学研究室
通讯作者Wang, Haomin
作者单位1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R.China
2.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Street, Shenhe District, Shenyang 110016, P. R. China
3.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, P. R. China
4.CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
推荐引用方式
GB/T 7714
Tang, Shujie,Wang, Haomin,Zhang Y,et al. Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition[J]. SCIENTIFIC REPORTS,2013,3:1-7.
APA Tang, Shujie.,Wang, Haomin.,Zhang Y.,Li, Ang.,Xie, Hong.,...&Jiang, Mianheng.(2013).Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition.SCIENTIFIC REPORTS,3,1-7.
MLA Tang, Shujie,et al."Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition".SCIENTIFIC REPORTS 3(2013):1-7.
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Precisely aligned gr(1089KB)期刊论文出版稿开放获取ODC PDDL浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Tang, Shujie]的文章
[Wang, Haomin]的文章
[Zhang Y(张嵛)]的文章
百度学术
百度学术中相似的文章
[Tang, Shujie]的文章
[Wang, Haomin]的文章
[Zhang Y(张嵛)]的文章
必应学术
必应学术中相似的文章
[Tang, Shujie]的文章
[Wang, Haomin]的文章
[Zhang Y(张嵛)]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。