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基于碳纳米管-电极结构的温度传感器芯片的加工方法
Alternative TitleMethod for processing temperature sensor chip based on carbon nanotube-electrode structure
董再励; 于海波; 王越超; 田孝军; 曲艳丽; 李文荣
Department机器人学研究室
Rights Holder中国科学院沈阳自动化研究所
Patent Agent沈阳科苑专利商标代理有限公司 21002
Country中国
Subtype发明
Status视为撤回
Abstract本发明公开一种基于碳纳米管-电极结构的温度传感器芯片的加工方法,利用介电泳技术实现碳纳米管在电极上装配,所述介电泳技术为采用质量百分比浓度为0.01%碳纳米管溶液(溶剂为纯度大于99%的丙酮),碳纳米管溶液首先利用探头式超声机进行分散预处理;在利用介电泳进行碳纳米管装配过程中,采用的介电泳的交变电压参数为:电压幅值为10V,频率为1MHz,波形为方波;并公开了所述碳纳米管-电极结构电极的加工步骤。按本发明方法加工的温度传感器芯在2mm×2mm的区域内集成了8个独立温度传感单元,具有低能耗、高灵敏度的传感器芯片结构。
Other AbstractThe invention discloses a method for processing a temperature sensor chip based on a carbon nanotube-electrode structure. A carbon nanotube is assembled on an electrode by a dielectrophoresis technology 0.01 mass percent carbon nanotube solution is adopted in the dielectrophoresis technology (a solvent is acetone with the purity of over 99 percent), and is subjected to dispersion preprocessing by a probe ultrasonic machine and in the process of assembling the carbon nanotube by dielectrophoresis, the alternating voltage parameters of the adopted dielectrophoresis are that: the voltage amplitude is 10V, the frequency is 1MHz, and the waveform is square wave. The invention also discloses the processing steps of the electrode with the carbon nanotube-electrode structure. Eight independent temperature sensing units are integrated in a 2mm*2mm area of a temperature sensor core processed by the method, and the sensor chip has low energy consumption and high sensitivity.
PCT Attributes
Application Date2009-12-23
2011-06-29
Date Available2013-10-15
Application NumberCN200910248695.4
Open (Notice) NumberCN102109387A
Language中文
Contribution Rank1
Document Type专利
Identifierhttp://ir.sia.cn/handle/173321/13728
Collection机器人学研究室
Affiliation中国科学院沈阳自动化研究所
Recommended Citation
GB/T 7714
董再励,于海波,王越超,等. 基于碳纳米管-电极结构的温度传感器芯片的加工方法[P]. 2011-06-29.
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