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专利名称: 等离子增强化学气象沉积设备的控制方法
其他题名: Control method for plasma reinforced chemical meteorology deposition apparatus
作者: 于海斌; 王宏; 林跃; 徐皑冬; 周建辉; 康凯; 刘明哲; 胡河春
所属部门: 工业信息学研究室
专利权人: 沈阳中科博微自动化技术有限公司 ; 中国科学院沈阳自动化研究所
专利代理: 沈阳科苑专利商标代理有限公司 21002
专利国别: 中国
专利类型: 发明授权
专利状态: 有效
摘要: 本发明属于控制系统技术,具体地说是一种等离子增强化学气相沉积设备的控制方法。它包括设备初始化控制、晶圆加工流程控制、设备异常报警控制,其中:设备初始化控制步骤为启动设备电源,打开报警监控,并发送传片腔和反应腔的初始化指令;晶圆加工流程控制步骤为导入工艺配方,使用批或层配方进行加工初始化、晶圆加工和加工结束控制;设备异常报警控制实现对设备异常和故障的监控,通过异常预处理机制和报警应答处理机制,对设备报警进行分步处理。采用本发明可实现对化学气相沉积的非常精确的工艺控制,能够满足半导体器件制造过程中的工艺要求。
英文摘要: The invention belongs to a control system technique, in particular to a method for controlling plasma intensified chemical vapor phase deposition equipment. The method comprises the equipment initialization control, the wafer processing flow control and the equipment exception alarming control, wherein the equipment initialization control comprises the steps of starting a power supply of the equipment, turning on an alarm monitor, and sending initialization instructions of a sheet transmitting cavity and a reaction cavity the wafer processing flow control comprises the steps of leading in a technique formulation, and using a batch or layer formulation to perform processing initialization, water processing and processing ending control the equipment exception alarming control realizes the monitoring of equipment exception and failure, and performs the step treatment on the equipment alarming through an exception pretreating mechanism and an alarming response processing mechanism. The invention realizes the accurate process control to the chemical vapor phase deposition, and meets the process requirement in the process of manufacturing semiconductor devices.
是否PCT专利:
申请日期: 2007-12-29
公开日期: 2009-07-01
授权日期: 2011-05-11
专利申请号: CN200710159306.1
公布/公告号: CN101469418B
语种: 中文
产权排序: 1
内容类型: 专利
URI标识: http://ir.sia.cn/handle/173321/14252
Appears in Collections:工业信息学研究室_专利

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