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A new CDS structure for high density FPA with low power
Wang X(王霄); Shi ZL(史泽林)
作者部门光电信息技术研究室
发表期刊VLSI Design
ISSN1065-514X
2015
卷号2015页码:1-7
收录类别EI
EI收录号20151100626697
产权排序1
摘要Being an essential part of infrared readout integrated circuit, correlated double sampling (CDS) circuits play important roles in both depressing reset noise and conditioning integration signals. To adapt applications for focal planes of large format and high density, a new structure of CDS circuit occupying small layout area is proposed, whose power dissipation has been optimized by using MOSFETs in operation of subthreshold region, which leads to 720 nW. Then the noise calculation model is established, based on which the noise analysis has been carried out by the approaches of transfer function and numerical simulations using SIMULINK and Verilog-A. The results are in good agreement, demonstrating the validity of the present noise calculation model. Thermal noise plays a dominant role in the long wave situation while 1/f noise is the majority in the medium wave situation. The total noise of long wave is smaller than medium wave, both of which increase with the integration capacitor and integration time increasing.
语种英语
文献类型期刊论文
条目标识符http://ir.sia.cn/handle/173321/15781
专题光电信息技术研究室
通讯作者Wang X(王霄)
作者单位1.Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China
2.University of the Chinese Academy of Sciences, Beijing, China
3.Key Laboratory of Opto-Electronic Information Processing, Chinese Academy of Sciences, Shenyang, China
推荐引用方式
GB/T 7714
Wang X,Shi ZL. A new CDS structure for high density FPA with low power[J]. VLSI Design,2015,2015:1-7.
APA Wang X,&Shi ZL.(2015).A new CDS structure for high density FPA with low power.VLSI Design,2015,1-7.
MLA Wang X,et al."A new CDS structure for high density FPA with low power".VLSI Design 2015(2015):1-7.
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