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题名: Fabrication of SWCNT-Graphene Field-Effect Transistors
作者: Xie SX(解双喜); Jiao ND(焦念东); Tung, Steve; Liu LQ(刘连庆)
作者部门: 机器人学研究室
关键词: graphene ; SWCNT ; all-carbon ; FETs ; dielectrophoresis ; AFM ; interdigitated electrodes
刊名: MICROMACHINES
ISSN号: 2072-666X
出版日期: 2015
卷号: 6, 期号:9, 页码:1317-1330
收录类别: SCI ; EI
产权排序: 1
项目资助者: National Natural Science Foundation of China [61573339, 61304251, 61503258] ; CAS FEA International Partnership Program for Creative Research Teams
摘要: Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.
语种: 英语
WOS记录号: WOS:000362547000007
WOS标题词: Science & Technology ; Technology
类目[WOS]: Nanoscience & Nanotechnology ; Instruments & Instrumentation
关键词[WOS]: CARBON NANOTUBES ; WORK FUNCTION ; SEMICONDUCTORS
研究领域[WOS]: Science & Technology - Other Topics ; Instruments & Instrumentation
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内容类型: 期刊论文
URI标识: http://ir.sia.cn/handle/173321/17174
Appears in Collections:机器人学研究室_期刊论文

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Recommended Citation:
Xie SX,Jiao ND,Tung, Steve,et al. Fabrication of SWCNT-Graphene Field-Effect Transistors[J]. MICROMACHINES,2015,6(9):1317-1330.
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文件名: Fabrication of SWCNT-Graphene Field-Effect Transistors.pdf
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