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Fabrication of SWCNT-Graphene Field-Effect Transistors
Xie SX(解双喜); Jiao ND(焦念东); Tung, Steve; Liu LQ(刘连庆)
作者部门机器人学研究室
关键词Graphene Swcnt All-carbon Fets Dielectrophoresis Afm Interdigitated Electrodes
发表期刊MICROMACHINES
ISSN2072-666X
2015
卷号6期号:9页码:1317-1330
收录类别SCI ; EI
EI收录号20154601535387
WOS记录号WOS:000362547000007
产权排序1
资助机构National Natural Science Foundation of China [61573339, 61304251, 61503258] ; CAS FEA International Partnership Program for Creative Research Teams
摘要Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.
语种英语
WOS标题词Science & Technology ; Technology
WOS类目Nanoscience & Nanotechnology ; Instruments & Instrumentation
关键词[WOS]CARBON NANOTUBES ; WORK FUNCTION ; SEMICONDUCTORS
WOS研究方向Science & Technology - Other Topics ; Instruments & Instrumentation
引用统计
被引频次:10[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sia.cn/handle/173321/17174
专题机器人学研究室
通讯作者Tung, Steve; Liu LQ(刘连庆)
作者单位1.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang, China
2.University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing, China
3.Department of Mechanical Engineering, University of Arkansas, 204 Mechanical Engineering Building, Fayetteville, AR, United States
推荐引用方式
GB/T 7714
Xie SX,Jiao ND,Tung, Steve,et al. Fabrication of SWCNT-Graphene Field-Effect Transistors[J]. MICROMACHINES,2015,6(9):1317-1330.
APA Xie SX,Jiao ND,Tung, Steve,&Liu LQ.(2015).Fabrication of SWCNT-Graphene Field-Effect Transistors.MICROMACHINES,6(9),1317-1330.
MLA Xie SX,et al."Fabrication of SWCNT-Graphene Field-Effect Transistors".MICROMACHINES 6.9(2015):1317-1330.
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