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Fabrication of SWCNT-Graphene Field-Effect Transistors
Xie SX(解双喜); Jiao ND(焦念东); Tung, Steve; Liu LQ(刘连庆)
Source PublicationMICROMACHINES
Indexed BySCI ; EI
EI Accession number20154601535387
WOS IDWOS:000362547000007
Contribution Rank1
Funding OrganizationNational Natural Science Foundation of China [61573339, 61304251, 61503258] ; CAS FEA International Partnership Program for Creative Research Teams
KeywordGraphene Swcnt All-carbon Fets Dielectrophoresis Afm Interdigitated Electrodes
AbstractGraphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.
WOS HeadingsScience & Technology ; Technology
WOS SubjectNanoscience & Nanotechnology ; Instruments & Instrumentation
WOS Research AreaScience & Technology - Other Topics ; Instruments & Instrumentation
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorTung, Steve; Liu LQ(刘连庆)
Affiliation1.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang, China
2.University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing, China
3.Department of Mechanical Engineering, University of Arkansas, 204 Mechanical Engineering Building, Fayetteville, AR, United States
Recommended Citation
GB/T 7714
Xie SX,Jiao ND,Tung, Steve,et al. Fabrication of SWCNT-Graphene Field-Effect Transistors[J]. MICROMACHINES,2015,6(9):1317-1330.
APA Xie SX,Jiao ND,Tung, Steve,&Liu LQ.(2015).Fabrication of SWCNT-Graphene Field-Effect Transistors.MICROMACHINES,6(9),1317-1330.
MLA Xie SX,et al."Fabrication of SWCNT-Graphene Field-Effect Transistors".MICROMACHINES 6.9(2015):1317-1330.
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