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题名: Noise optimization of switched capacitor integrator
作者: Wang X(王霄); Shi ZL(史泽林); Xu BS(徐保树)
作者部门: 光电信息技术研究室
会议名称: 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
会议日期: June 1-4, 2015
会议地点: Singapore
会议录: 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
会议录出版者: IEEE
会议录出版地: Piscataway, NJ, USA
出版日期: 2015
页码: 519-522
收录类别: EI ; CPCI(ISTP)
ISBN号: 978-1-4799-8362-9
关键词: switched-capacitor(SC) circuit ; noise model ; capacitor ; time-domain simulation
摘要: The paper presents a method of noise optimization for a type of classical switched-capacitor(SC) integrators to design the distribution plan of capacitors in a specific layout area. The OP utilized in the SC integrator is a two-stage OP. Thus there are three significant capacitors, two of which are sampling capacitors and one of which is the compensation capacitor in the OP. Using small signal model, noise model of positive integrator and negative integrator are established, respectively, which are expressed in transfer functions to find the optimal distribution of capacitors. The noise analysis is validated by a time-domain simulation, corresponding well with each other. The result shows that the positive integrator has same noise performance as the negative integrator and under the limit of 30um × 30um layout area with TSMC 0.18um mixed-signal process and under the 10 AR and 0.1% DE demand the two sampling capacitors and the compensation capacitor should be 1pF, 0.lpF and 0.7pF, respectively to achieve an optimal noise performance with satisfying the speed demand simultaneously with 10 stages of integration and sampling capacitor ratio.
语种: 英语
产权排序: 1
WOS记录号: WOS:000380458700131
Citation statistics:
内容类型: 会议论文
URI标识: http://ir.sia.cn/handle/173321/17344
Appears in Collections:光电信息技术研究室_会议论文

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Recommended Citation:
Wang X,Shi ZL,Xu BS. Noise optimization of switched capacitor integrator[C]. 见:2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Singapore. June 1-4, 2015.
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