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Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition
Li M(李萌); Liu N(刘娜); Li P(李盼); Shi JL(施佳林); Li GY(李广勇); Xi N(席宁); Wang YC(王越超); Liu LQ(刘连庆)
Source PublicationACS Applied Materials and Interfaces
Indexed BySCI ; EI
EI Accession number20171103435225
WOS IDWOS:000396186000056
Contribution Rank1
Funding OrganizationNSFC/RGC Joint Research Scheme (Project 51461165501, Project CityU132/14), National Natural Science Foundation of China (Project 61522312), and the CAS FEA International Partnership Program for Creative Research Teams.
KeywordMask-free Fabrication Metal-contact Surface Multilayer Mos2 Thickness Of Mos2 Film Thin-film Transistors

Transition metal dichalcogenides, particularly MoS2, have recently received enormous interest in explorations of the physics and technology of nanodevice applications because of their excellent optical and electronic properties. Although monolayer MoS2has been extensively investigated for various possible applications, its difficulty of fabrication renders it less appealing than multilayer MoS2. Moreover, multilayer MoS2, with its inherent high electronic/photonic state densities, has higher output driving capabilities and can better satisfy the ever-increasing demand for versatile devices. Here, we present multilayer MoS2back-gate thin-film transistors (TFTs) that can achieve a relatively low subthreshold swing of 0.75 V/decade and a high mobility of 41 cm2·V-1·s-1, which exceeds the typical mobility value of state-of-the-art amorphous silicon-based TFTs by a factor of 80. Ag and Au electrode-based MoS2TFTs were fabricated by a convenient and rapid process. Then we performed a detailed analysis of the impacts of metal contacts and MoS2film thickness on electronic performance. Our findings show that smoother metal contacts exhibit better electronic characteristics and that MoS2film thickness should be controlled within a reasonable range of 30-40 nm to obtain the best mobility values, thereby providing valuable insights regarding performance enhancement for MoS2TFTs. Additionally, to overcome the limitations of the conventional fabrication method, we employed a novel approach known as optically induced electrodeposition (OIE), which allows the flexible and precise patterning of metal films and enables rapid and mask-free device fabrication, for TFT fabrication.

WOS HeadingsScience & Technology ; Technology
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS KeywordField-effect Transistors ; Single-layer Mos2 ; Monolayer Mos2 ; Cvd Mos2 ; Graphene ; Phototransistors ; Contacts ; Interface ; Arrays
WOS Research AreaScience & Technology - Other Topics ; Materials Science
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorLiu LQ(刘连庆)
Affiliation1.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China
2.University of the Chinese Academy of Sciences, Beijing 100049, China
3.School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200072, China
4.University of Pittsburgh, Pittsburgh, PA, 15260, United States
5.Emerging Technologies Institute, Department of Industrial & Manufacturing Systems Engineering, University of Hong Kong, Pokfulam, Hong Kong
Recommended Citation
GB/T 7714
Li M,Liu N,Li P,et al. Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition[J]. ACS Applied Materials and Interfaces,2017,9(9):8361-8370.
APA Li M.,Liu N.,Li P.,Shi JL.,Li GY.,...&Liu LQ.(2017).Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition.ACS Applied Materials and Interfaces,9(9),8361-8370.
MLA Li M,et al."Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition".ACS Applied Materials and Interfaces 9.9(2017):8361-8370.
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