NSFC (Grant No. 51602111), the National Key R&D Program of China (2016YFB0401502), Guangdong Provincial Grant (2015A030310196, 2014B090915005), Guangdong Provincial Science and Technology Project (2017A050506009), the Pearl River S&T Nova Program of Guangzhou (201506040045), the Hundred Talent Program of Chinese Academy Sciences (QG Meng), Guangzhou Post-doctoral Initial Funding and the National 111 Project (ZH Chen), Nansha Science and Technology Project (2016GJ005).
摘要:
A series of barbituric acid doped carbon nitride (CN-BA) photocatalysts were successfully prepared by copolymerizing dicyandiamide with barbituric acid (BA). Under AM1.5 simulated sunlight, CN-BA photocatalysts exhibit enhanced photocatalytic activity compared to pure carbon nitride for the degradation of aniline. The highest activity is obtained with 2% doped CN-BA photocatalyst. Results on the photodegradation of aniline indicate that for the optimized CN-BA photocatalyst, the concentration of aniline solution was reduced gradually from 16 mg/L to 1.354 mg/L in 2 h. This corresponds to a 6 times higher photodegradation efficiency than pure carbon nitride samples. The enhanced photocatalytic activity of CN-BA relies on the enhanced surface area, the higher light absorption and the reduced recombination of the photo-generated electron-hole pairs. This interpretation results from multiple characterizations with EPR, BET, N2adsorption, Solid-state13C NMR, UV–vis DRS, FESEM, and TEM. Under simulated sunlight irradiation, CN-BA is excited and generates electron-hole pairs. The photo-generated electrons in the CN-BA conduction band react with the molecular oxygen to form [rad]O2−. Part of the [rad]O2−transforms into [rad]OH, which further oxides aniline. Meanwhile, photo-generated holes in the valence band of CN-BA can benefit to the formation of [rad]OH or directly oxide aniline.
1.Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province, China 2.Shenyang Institute of Automation, Chinese Academy of Sciences, Guangzhou, 511458, China 3.International Academy of Optoelectronics at Zhaoqing, South China Normal University, Guangdong Province, China 4.Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province, China 5.Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
Recommended Citation:
Li, Lin,Meng QG,Lv HQ,et al. Synthesis of barbituric acid doped carbon nitride for efficient solar-driven photocatalytic degradation of aniline[J]. Applied Surface Science,2018,428:739-747.
