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题名:
Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling
作者: Cheng H(程贺); Zhang ZP(张志鹏); Yang ZJ(杨志家); Liu ZF(刘志峰)
作者部门: 工业控制网络与系统研究室
通讯作者: Liu ZF(刘志峰)
会议名称: 2018 International Conference on Electronics, Communications and Control Engineering, ICECC 2018
会议日期: March 6-8, 2018
会议地点: Male, Maldives
会议主办者: Avid College; International Association of Computer Science and Information Technology
会议录: Journal of Physics: Conference Series
会议录出版者: IOP
会议录出版地: Bristol, UK
出版日期: 2018
页码: 1-7
收录类别: EI
EI收录号: 20182505318142
产权排序: 1
ISSN号: 1742-6588
摘要: One compact model of drain current valid in the subthreshold region, for short-channel cylindrical gate-all-around metal-oxide-semiconductor field-effect transistors including the source-to-drain tunneling has been proposed. From a two-dimensional analysis, the drain-induced barrier lowering effect is modeled according to our previous work. In this paper, by introducing the profile of the energy subband level along the electron transport direction into the Wentzel-Kramers-Brillouin approximation, we can numerically derive the expression of the tunneling transmission coefficients. Then, the source-to-drain tunneling current in the subthreshold region is evaluated by using the Landauer formula. The results obtained are compared with non-equilibrium Green's function transport simulations with a good accuracy.
语种: 英语
内容类型: 会议论文
URI标识: http://ir.sia.cn/handle/173321/22088
Appears in Collections:工业控制网络与系统研究室_会议论文

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作者单位: Department of Industrial Control Network and Systems, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China

Recommended Citation:
Cheng H,Zhang ZP,Yang ZJ,et al. Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling[C]. 2018 International Conference on Electronics, Communications and Control Engineering, ICECC 2018. Male, Maldives. March 6-8, 2018.Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling.
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文件名: Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling.pdf
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