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Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling
Cheng H(程贺); Zhang ZP(张志鹏); Yang ZJ(杨志家); Liu ZF(刘志峰)
Department工业控制网络与系统研究室
Conference Name2018 International Conference on Electronics, Communications and Control Engineering, ICECC 2018
Conference DateMarch 6-8, 2018
Conference PlaceMale, Maldives
Author of SourceAvid College ; International Association of Computer Science and Information Technology
Source PublicationJournal of Physics: Conference Series
PublisherIOP
Publication PlaceBristol, UK
2018
Pages1-7
Indexed ByEI ; CPCI(ISTP)
EI Accession number20182505318142
WOS IDWOS:000436348200011
Contribution Rank1
ISSN1742-6588
Abstract

One compact model of drain current valid in the subthreshold region, for short-channel cylindrical gate-all-around metal-oxide-semiconductor field-effect transistors including the source-to-drain tunneling has been proposed. From a two-dimensional analysis, the drain-induced barrier lowering effect is modeled according to our previous work. In this paper, by introducing the profile of the energy subband level along the electron transport direction into the Wentzel-Kramers-Brillouin approximation, we can numerically derive the expression of the tunneling transmission coefficients. Then, the source-to-drain tunneling current in the subthreshold region is evaluated by using the Landauer formula. The results obtained are compared with non-equilibrium Green's function transport simulations with a good accuracy.

Language英语
Citation statistics
Document Type会议论文
Identifierhttp://ir.sia.cn/handle/173321/22109
Collection工业控制网络与系统研究室
Corresponding AuthorLiu ZF(刘志峰)
AffiliationDepartment of Industrial Control Network and Systems, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China
Recommended Citation
GB/T 7714
Cheng H,Zhang ZP,Yang ZJ,et al. Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling[C]//Avid College, International Association of Computer Science and Information Technology. Bristol, UK:IOP,2018:1-7.
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