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Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling
Cheng H(程贺); Zhang ZP(张志鹏); Yang ZJ(杨志家); Liu ZF(刘志峰)
作者部门工业控制网络与系统研究室
会议名称2018 International Conference on Electronics, Communications and Control Engineering, ICECC 2018
会议日期March 6-8, 2018
会议地点Male, Maldives
会议主办者Avid College ; International Association of Computer Science and Information Technology
会议录名称Journal of Physics: Conference Series
出版者IOP
出版地Bristol, UK
2018
页码1-7
收录类别EI ; CPCI(ISTP)
EI收录号20182505318142
WOS记录号WOS:000436348200011
产权排序1
ISSN号1742-6588
摘要

One compact model of drain current valid in the subthreshold region, for short-channel cylindrical gate-all-around metal-oxide-semiconductor field-effect transistors including the source-to-drain tunneling has been proposed. From a two-dimensional analysis, the drain-induced barrier lowering effect is modeled according to our previous work. In this paper, by introducing the profile of the energy subband level along the electron transport direction into the Wentzel-Kramers-Brillouin approximation, we can numerically derive the expression of the tunneling transmission coefficients. Then, the source-to-drain tunneling current in the subthreshold region is evaluated by using the Landauer formula. The results obtained are compared with non-equilibrium Green's function transport simulations with a good accuracy.

语种英语
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文献类型会议论文
条目标识符http://ir.sia.cn/handle/173321/22109
专题工业控制网络与系统研究室
通讯作者Liu ZF(刘志峰)
作者单位Department of Industrial Control Network and Systems, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110016, China
推荐引用方式
GB/T 7714
Cheng H,Zhang ZP,Yang ZJ,et al. Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling[C]//Avid College, International Association of Computer Science and Information Technology. Bristol, UK:IOP,2018:1-7.
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