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Fabrication of Sub-Micrometer-Sized MoS2 Thin-Film Transistor by Phase Mode AFM Lithography
Liu LQ(刘连庆)1; Shi JL(施佳林)1; Li M(李萌)1,2; Yu P(于鹏)1; Yang T(杨铁)1; Li GY(李广勇)3
Department机器人学研究室
Source PublicationSmall
ISSN1613-6810
2018
Volume14Issue:49Pages:1-6
Indexed BySCI ; EI
EI Accession number20183905857415
WOS IDWOS:000456503600013
Contribution Rank1
Funding OrganizationNational Natural Science Foundation of China ; CAS FEA International Partnership Program for Creative Research Teams
KeywordAFM lithography MoS2 TFT fabrication
AbstractThe phase mode atomic force microscopy (AFM) lithography and monolayer lift-off process are combined to fabricate electronics based on 2D materials (2DMs), which remove the need for pre-fabricating markers and increase the accuracy of the overlay and alignment. The promising phase mode of AFM lithography eliminates the drawbacks of the conventional force mode such as the over-cut, under-cut, debris effect, and severe tip wear. The planar size of MoS2 thin-film transistors is shrunken down to sub-micrometer by the proposed method, and the fabricated devices demonstrate n-type characteristics. It offers a more flexible and easier way to fabricate prototypes of sub-micrometer-sized 2DMs based devices, and gives the opportunity to explore the size effect on the performance of 2DMs devices.
Language英语
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS KeywordFIELD-EFFECT TRANSISTORS ; ATOMIC-FORCE MICROSCOPY ; METAL NANOWIRES ; MOBILITY
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
Funding ProjectNational Natural Science Foundation of China[61522312] ; National Natural Science Foundation of China[61433017] ; National Natural Science Foundation of China[U1613220] ; CAS FEA International Partnership Program for Creative Research Teams
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Document Type期刊论文
Identifierhttp://ir.sia.cn/handle/173321/22818
Collection机器人学研究室
Corresponding AuthorLiu LQ(刘连庆)
Affiliation1.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Science, Shenyang 110016, China
2.University of Chinese Academy of Science, Beijing 100049, China
3.Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA
4.15213, United States
Recommended Citation
GB/T 7714
Liu LQ,Shi JL,Li M,et al. Fabrication of Sub-Micrometer-Sized MoS2 Thin-Film Transistor by Phase Mode AFM Lithography[J]. Small,2018,14(49):1-6.
APA Liu LQ,Shi JL,Li M,Yu P,Yang T,&Li GY.(2018).Fabrication of Sub-Micrometer-Sized MoS2 Thin-Film Transistor by Phase Mode AFM Lithography.Small,14(49),1-6.
MLA Liu LQ,et al."Fabrication of Sub-Micrometer-Sized MoS2 Thin-Film Transistor by Phase Mode AFM Lithography".Small 14.49(2018):1-6.
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