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A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices
Zhang, Dingdong1,2; Du, Jinhong1,2; Hong, Yi-Lun1,2; Zhang, Weimin1,2; Wang, Xiao3,4; Jin, Hui3; Burn, Paul L.3; Yu, Junsheng4; Chen, Maolin1,2; Sun, Dong-Ming1,2; Li M(李萌)5; Liu LQ(刘连庆)5; Ma, Lai-Peng1,2; Cheng, Hui-Ming1,2,6; Ren, Wencai1,2
Department机器人学研究室
Source PublicationACS Nano
ISSN1936-0851
2019
Volume13Issue:5Pages:5513-5522
Indexed BySCI ; EI
EI Accession number20192106952354
WOS IDWOS:000469886300057
Contribution Rank5
Funding OrganizationMinistry of Science and Technology of China ; National Science Foundation of China ; Chinese Academy of Sciences ; Postdoctoral Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Australian Research Council ; Australian Government through the Australian Renewable Energy Agency (ARENA) Australian Centre for Advanced Photovoltaics
Keywordrosin graphene 2D materials clean transfer optoelectronic devices
AbstractClean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials grown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe2 and WS2 single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe2 retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling high-performance field effect transistors with mobility and ON/OFF ratio ∼10 times higher than those made by PMMA-transferred WSe2. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of ∼6.4% achieved.
Language英语
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS KeywordTRANSITION-METAL DICHALCOGENIDES ; ORGANIC SOLAR-CELLS ; LARGE-AREA SYNTHESIS ; MONOLAYER MOS2 ; GRAPHENE ELECTRODE ; FILMS ; PHOTOLUMINESCENCE ; WSE2 ; WS2 ; EVOLUTION
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
Funding ProjectAustralian Government through the Australian Renewable Energy Agency (ARENA) Australian Centre for Advanced Photovoltaics ; Australian Research Council[FL160100067] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Postdoctoral Science Foundation of China[2018M630309] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; National Science Foundation of China[51521091] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51861135201] ; National Science Foundation of China[51572265] ; Ministry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFA0200101] ; National Science Foundation of China[51572265] ; National Science Foundation of China[51861135201] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51521091] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Postdoctoral Science Foundation of China[2018M630309] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Australian Research Council[FL160100067] ; Australian Government through the Australian Renewable Energy Agency (ARENA) Australian Centre for Advanced Photovoltaics
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Document Type期刊论文
Identifierhttp://ir.sia.cn/handle/173321/24716
Collection机器人学研究室
Corresponding AuthorRen, Wencai
Affiliation1.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
2.School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang 110016, China
3.Centre for Organic Photonics and Electronics, School of Chemistry and Molecular Biosciences, University of Queensland, Brisbane, QLD 4072, Australia
4.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
5.Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Street, Shenyang 110016, China
6.Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, 1001 Xueyuan Road, Shenzhen 518055, China
Recommended Citation
GB/T 7714
Zhang, Dingdong,Du, Jinhong,Hong, Yi-Lun,et al. A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices[J]. ACS Nano,2019,13(5):5513-5522.
APA Zhang, Dingdong.,Du, Jinhong.,Hong, Yi-Lun.,Zhang, Weimin.,Wang, Xiao.,...&Ren, Wencai.(2019).A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices.ACS Nano,13(5),5513-5522.
MLA Zhang, Dingdong,et al."A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices".ACS Nano 13.5(2019):5513-5522.
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