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光刻过程RtR控制方法研究进展分析
Alternative TitleResearch Analysis of RtR Control Method for Lithography Process
王亮; 胡静涛
Department工业信息学研究室
Source Publication半导体技术
ISSN1003-353X
2011
Volume36Issue:3Pages:199-205
Indexed ByCSCD
CSCD IDCSCD:4158025
Contribution Rank1
Funding Organization国家科技重大专项(2009ZX02001-005); 沈阳市科技计划资助项目(108155202200)
Keyword半导体制造业 光刻过程 Rtr控制 过程控制 模型预测控制 多变量控制器 控制方法 研究进展 关键尺寸 过程建模
Abstract首先对光刻过程和RtR(Run-to-Run)控制技术的产生背景进行了介绍,对统计过程控制的不足进行了分析并给出了RtR控制器的一般结构。然后从过程建模和控制算法两个角度对三种主要的光刻过程RtR控制器EWMA,MPC和ANN进行了综述和评价,对这三种控制器在非线性控制、单变量控制、多变量控制的适用性和优化控制效果进行了比较分析。最后指出基于MPC的非线性多变量控制器将成为光刻过程RtR控制器的主要研究方向。
Other AbstractFirstly,the lithography process and background of RtR control technique were introduced.The shortage of statistical process control was analyzed and the general structure of the RtR controller was given.Then,an overview and evaluation about EWMA,MPC and ANN controllers of the lithography process were given in the ways of modeling and control algorithms.Besides,the comparative analysis of the nonlinear control,SISO control,MISO control,MIMO control and optimization control quality of three controllers were p...
Language中文
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Document Type期刊论文
Identifierhttp://ir.sia.cn/handle/173321/6982
Collection工业信息学研究室
Corresponding Author王亮
Affiliation1.中国科学院沈阳自动化所工业信息学重点实验室
2.中国科学院研究生院
3.沈阳化工大学
Recommended Citation
GB/T 7714
王亮,胡静涛. 光刻过程RtR控制方法研究进展分析[J]. 半导体技术,2011,36(3):199-205.
APA 王亮,&胡静涛.(2011).光刻过程RtR控制方法研究进展分析.半导体技术,36(3),199-205.
MLA 王亮,et al."光刻过程RtR控制方法研究进展分析".半导体技术 36.3(2011):199-205.
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