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题名: Defect Integration of Reduced Graphene Oxide based on Dielectrophoretic Assembly
作者: Zhang Y(张嵛) ; Liu LQ(刘连庆) ; Xi N(席宁) ; Wang YC(王越超) ; Dong ZL(董再励)
作者部门: 机器人学研究室
会议名称: 2011 11th IEEE International Conference on Nanotechnology
会议日期: August 15-18, 2011
会议地点: Portland, Oregon, USA
会议主办者: Nanotechnology Council - NANO
会议录: 2011 11th IEEE International Conference on Nanotechnology
会议录出版者: IEEE
会议录出版地: Piscataway, NJ
出版日期: 2011
页码: 1074-1079
ISBN号: 978-1-4577-1515-0
摘要: The defect integration of Reduced Graphene Oxide (RGO) sheets based on dielectrophoretic (DEP) assembly has been experimentally studied in this paper. Then an Atomic Force Microscopy (AFM) based mechanical cutting method is firstly proposed to form line defects in RGO sheets. Based on these two methods, the experimental studies of the effect of line defects on RGO are explored. The electric transport measurement results show that the resistance of the defected RGO generally increases due to the Anderson localization, which provide a solid prove to the theoretical studies of the influence of defects on the electrical properties of RGO.
语种: 英语
产权排序: 1
内容类型: 会议论文
URI标识: http://ir.sia.cn/handle/173321/8625
Appears in Collections:机器人学研究室_会议论文

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Recommended Citation:
张嵛; 刘连庆; 席宁; 王越超; 董再励 .Defect Integration of Reduced Graphene Oxide based on Dielectrophoretic Assembly.见:IEEE .2011 11th IEEE International Conference on Nanotechnology,Piscataway, NJ ,2011,1074-1079
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